%0 Journal Article
%T Analysis of Turn-off Failure in MCT<br>MCT关断失效分析
%A ZHANG He
%A |ming
%A DAI Xian
%A |ying
%A WANG Wei
%A <br>张鹤鸣
%A 戴显英
%A 王伟
%J 半导体学报
%D 2000
%I 
%X The mechanism of turn\|off failure in MCT has been simulated and verified by test.It is shown that the nonuniform temperature distribution in the device and the unequal gate resistance between cells cause current crowding in part of the MCT cells and result in the device failing to turn\|off.
%K MCT
%K Turn\|off
%K Failure Analysis<br>MCT
%K 关断
%K 失效分析
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=05472A78AB981B57&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=38B194292C032A66&sid=5D8C08279A19B0D4&eid=B8F8200D88DDC7D6&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=6