%0 Journal Article
%T Insulated gate bipolar transistor with trench gate structure of accumulation channel<br>具有积累层沟道的槽栅IGBT结构
%A Qian Mengliang
%A Li Zehong
%A Zhang Bo
%A Li Zhaoji
%A <br>钱梦亮
%A 李泽宏
%A 张波
%A 李肇基
%J 半导体学报
%D 2010
%I 
%X An accumulation channel trench gate insulated gate bipolar transistor (ACT-IGBT) is proposed. The simulation results show that for a blocking capability of 1200 V, the on-state voltage drops of ACT-IGBT are 1.5 and 2 V at a temperature of 300 and 400 K, respectively, at a collector current density of 100 A/cm2. In contrast, the on-state voltage drops of a conventional trench gate IGBT (CT-IGBT) are 1.7 and 2.4 V at a temperature of 300 and 400 K, respectively. Compared to the CT-IGBT, the ACT-IGBT has a lower on-state voltage drop and a larger forward bias safe operating area. Meanwhile, the forward blocking characteristics and turn-off performance of the ACT-IGBT are also analyzed.
%K ACT-IGBT
%K CT-IGBT
%K on-state voltage drop
%K forward blocking voltage
%K FBSOA<br>积累层沟道槽栅IGBT，常规槽栅IGBT，开态压降，正向阻断电压，正向安全工作区
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=9F1ECD80CC8ED46B5545663A11F5F586&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=38B194292C032A66&sid=1A8185C03C89C56D&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0