%0 Journal Article
%T Tunnelling piezoresistive effect of grain boundary in polysilicon nano-films<br>多晶硅纳米薄膜晶界隧道压阻效应
%A Chuai Rongyan
%A Liu Bin
%A Liu Xiaowei
%A Sun Xianlong
%A Shi Changzhi
%A Yang Lijian
%A <br>揣荣岩
%A 刘斌
%A 刘晓为
%A 孙显龙
%A 施长治
%A 杨理践
%J 半导体学报
%D 2010
%I 
%X The experiment results indicate that the gauge factor of highly boron doped polysilicon nanofilm is bigger than that of monocrystalline silicon with the same doping concentration, and increases with the grain size decreasing. To apply the unique properties reasonably in the fabrication of piezoresistive devices, it was expounded based on the analysis of energy band structure that the properties were caused by the tunnel current which varies with the strain change forming a tunnelling piezoresistive effect. Finally, a calculation method of piezoresistance coefficients around grain boundaries was presented, and then the experiment results of polysilicon nanofilms were explained theoretically.
%K polysilicon nanofilm
%K tunnelling piezoresistive effect
%K gauge factor
%K piezoresistance coefficient<br>多晶硅纳米薄膜
%K 隧道压阻效应
%K 应变因子
%K 压阻系数
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5535BABE461BA70E41D08C0522958F5A&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=38B194292C032A66&sid=42ED1DB9619E674C&eid=5D311CA918CA9A03&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=26