%0 Journal Article
%T Influence of sputtering pressure on optical constants of a-GaAs1-xNx thin films<br>溅射压力对制备a-GaAs1-xNx 薄膜光学常数的影响
%A Jia Baoshan
%A Wang Yunhua
%A Zhou Lu
%A Bai Duanyuan
%A Qiao Zhongliang
%A Gao Xin
%A Bo Baoxue
%A <br>贾宝山
%A 王云华
%A 周路
%A 白端元
%A 乔忠良
%A 高欣
%A 薄报学
%J 半导体学报
%D 2012
%I 
%X Amorphous GaAs1-xNx (a-GaAs1-xNx) thin films have been deposited at room temperature by a reactive magnetron sputtering technique on glass substrates with different sputtering pressures. The thickness, nitrogen content, carrier concentration and transmittance of the as-deposited films were determined experimentally. The influence of sputtering pressure on the optical band gap, refractive index and dispersion parameters (Eo, Ed) has been investigated. An analysis of the absorption coefficient revealed a direct optical transition characterizing the as-deposited films. The refractive index dispersions of the as-deposited a-GaAs1-xNx films fitted well to the Cauchy dispersion relation and the Wemple model.
%K a-GaAs1-xNx thin films
%K sputtering deposition
%K optical constants<br>反应磁控溅射法
%K 薄膜
%K 压力
%K 光学常数
%K 色散关系
%K 载流子浓度
%K 玻璃基板
%K 光学带隙
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=A6275A725A751A6EBF774C077B541D74&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=5D311CA918CA9A03&sid=11E26AD3D0FFF0E2&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=25