%0 Journal Article
%T Quasi-Thermodynamic Model of MOVPE of InAlN
%A LU Da
%A |Cheng
%A DUAN Shu
%A |kun Laboratory of Semiconductor Materials Sciences
%A <br>陆大成
%A 段树坤
%J 半导体学报
%D 2000
%I 
%X Group - nitrides are very importantmaterials,which are applied to the fabrication ofgreen,blue and ultraviolet light emitting diodes(L EDs) and laser diodes(L Ds) 1 ] .Inx Al1 - xN alloy is a kind of promising material for Ga N- based...
%K InAlN
%K MOVPE
%K thermodynamic model<br>InAlN
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=ACD7FFEB1FAE19B186E96DCFEB4EF598&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=5D311CA918CA9A03&sid=B3AAD7DC3C912B50&eid=7F9B7E84827A650F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=0