%0 Journal Article
%T Influence of Buffer Structure on Relaxation of Stress in Si_(1-x) Ge_x by Raman Spectra<br>Raman谱研究不同缓冲层结构对Si_(1-x)Ge_x应力弛豫的影响
%A LI Dai
%A |zong
%A CHENG Bu
%A |wen
%A HUANG Chang
%A |jun
%A WANG Hong
%A |jie
%A YU Zhuo
%A ZHANG Chun
%A |hui
%A YU Jin
%A |zhong
%A WANG Qi
%A |ming
%A <br>李代宗
%A 成步文
%A 黄昌俊
%A 王红杰
%A 于卓
%A 张春晖
%A 余金中
%A 王启明
%J 半导体学报
%D 2000
%I 
%X The influence of different types of the buffer structures on the extent of stress relaxation of the uniform composition Si 1- x Ge x layers grown by Ultrahigh Vacuum Chemical Vapor Deposition was studied by Raman spectra. There is a linear Ge composition dependence of the Si\|Si optical phonon mode shift,which is relative to the Si substrate for both fully relaxed and fully strained SiGe layers, as is used to calculate the extent of stress relaxation combined with the measured Raman shift. Because the stress on the interfaces of superlattice buffer is larger than that of the graded SiGe buffer, the threading arms of dislocations are bent to form the close loops, resulting in a lower surface dislocation density and a larger extent of stress relaxation.
%K ultrahigh vacuum chemical vapor deposition
%K SiGe
%K Raman spectrum<br>超高真空化学气相淀积
%K SiGe
%K Raman散射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6CA68E9C42161526&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=5D311CA918CA9A03&sid=8D71AF42ACD39979&eid=231F9A307C169827&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0