%0 Journal Article
%T Origin of Photoluminescence of Neodymium-Implanted Silicon<br>钕离子注入单晶硅光致发光的起源(英文)
%A XIAO Zhi-Song
%A XU Fei
%A ZHANG Tong-he
%A YI Zhong-zhen
%A CHENG Guo-an
%A <br>肖志松
%A 徐飞
%A 张通和
%A 易仲珍
%A 程国安
%J 半导体学报
%D 2001
%I 
%X Neodymium is incorporated into single crystalline silicon on MEVVA (Metal Vapor Vacuum Arc) ion source.At room temperature,strong ultra violet and visible fluorescence are observed at the excitation wavelength of 220nm.Luminescence intensity increases with the increase of ion fluence.XPS results manifest that Si-O,Nd-O,Si-Si and O-O bonds exist in the implanted layers.Luminescence mainly results from the radiation transition in the intra 4f shell of Nd 3+ ion.The defects' and damages' contribution to the luminescence is also presented.
%K photoluminescence
%K ion implantation
%K rare
%K earth<br>光致发光
%K 离子注入
%K 稀土
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=88A96CC9EA854636&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=708DD6B15D2464E8&sid=CB8F7B3BEDA8D32B&eid=196B965FCC00ED31&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14