%0 Journal Article
%T ISM Band Medium Power Amplifier<br>ISM频段中功率功率放大器(英文)
%A Bai Dafu
%A Liu Xunchun
%A Yuan Zhipeng
%A Qian Yongxue
%A <br>白大夫
%A 刘训春
%A 袁志鹏
%A 钱永学
%J 半导体学报
%D 2004
%I 
%X With the large-signal model extracted from the InGaP/GaAs HBT with three fingers,a three-stage,class AB power amplifier at ISM band is designed.Through the optimization of the traditional bias network,the gain compression at the low input power level is eliminated successfully.At 3.5V of supply voltage of the power amplifier after optimization exhibits 30dBm of maximum linear output power,43.4% of power added efficiency 109.7mA of a quite low quiescent bias current ,29.1dB of the corresponding gain,and -100dBc of the adjacent channel power rejection (ACPR) at the output power of 30dBm.
%K heterojunction bipolar transistor
%K power amplifier
%K bias network
%K gain compression
%K quiescent bias current<br>异质结双极型晶体管
%K 功率放大器
%K 偏置网络
%K 增益压缩
%K 静态偏置电流
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=998B9D7A20B242AA&yid=D0E58B75BFD8E51C&vid=C5154311167311FE&iid=B31275AF3241DB2D&sid=C824C8F9F54AE9B9&eid=7E2D9DFE40003B3F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=10