%0 Journal Article
%T Modification of MOSFET''''s Substrate Current Model in Deep Submicrometer Regime<br>MOSFET衬底电流模型在深亚微米尺寸下的修正
%A SUN Zi
%A |min
%A LIU Li
%A |tian
%A LI Zhi
%A |jian
%A <br>孙自敏
%A 刘理天
%A 李志坚
%J 半导体学报
%D 2000
%I 
%X For the reliability analysis and the design of MOSFET's circuits, it is necessary to model the substrate current accurately.This paper establishes a substrate current model of conventional deep\|submicrometer MOSFET's on the base of carrier transport. Non\|local transport is considered in the model. The model is simple and proved to fit the experiments very well. The influences of substrate doping concentration and gate oxide thickness to fitting factors are also presented. The physical meanings of the fitting factors are analyzed.
%K MOSFET
%K Substrate Current
%K Deep Submicrometer<br>MOSFET
%K 衬底电流
%K 深亚微米
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=DB25B448ECB1B2DB&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=0B39A22176CE99FB&sid=70AC2EF7F2065E09&eid=7CE3F1F20DE6B307&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=6