%0 Journal Article
%T OTFT with Bilayer Gate Insulator and Modificative Electrode<br>具有双绝缘层和修饰电极的薄膜场效应晶体管
%A Bai Yu
%A Khizar-ul-Haq
%A MAKhan
%A Jiang Xueyin
%A Zhang Zhilin
%A <br>白钰
%A 哈克
%A 鲁富翰
%A 蒋雪茵
%A 张志林
%J 半导体学报
%D 2008
%I 
%X An organic thin-film transistor (OTFT) with an OTS/SiO2 bilayer gate insulator and a MoO3/Al electrode configuration between gate insulator and source/drain electrodes has been investigated. A thermally grown SiO2 layer is used as the OTFT gate dielectric and copper phthalocyanine(CuPc) is used as an active layer. This OTS/SiO2 bilayer gate insulator configuration increases the field-effect mobility, reduces the threshold voltage, and improves the on/off ratio simultaneously. The device with a MoO3/Al electrode has shown similar Ids compared to the device with an Au electrode at the same gate voltage. Our results indicate that using a double-layer of electrodes and a double-layer of insulators is an effective way to improve OTFT performance.
%K organic thin film transistor
%K modified electrode
%K bilayer insulator
%K mobility<br>有机薄膜晶体管
%K 修饰电极
%K 双绝缘层
%K 迁移率
%K organic
%K thin
%K film
%K transistor
%K modified
%K electrode
%K bilayer
%K insulator
%K mobility
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=18BCC809058916CE864879A9E0396695&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=E158A972A605785F&sid=7C13E30F5EDBE7AB&eid=BBA8B1249CDAA6CE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9