%0 Journal Article
%T Electrical Properties and Photoluminescence of P-CdZnTe Irradiated by High-Energy Ar+<br>高能Ar~+辐照P型CdZnTe的电学特性和光致发光
%A PEI Hui yuan
%A LI Xiang yang
%A FANG Jia xiong
%A HOU Ming dong
%A <br>裴慧元
%A 李向阳
%A 方家熊
%A 侯明东
%J 半导体学报
%D 2001
%I 
%X Ar + with energy of 2GeV and fluences of 10 10 -10 13 cm -2 are used to irradiate P Cd 0.96 Zn 0.04 Te.The measurement of electrical properties and photoluminescence is carried out on the samples,which are nonirradiated and exposed to various ion flences,respectively.The densities of the acceptor type defects and scattering centers are elevated after the irradiation,which result in the increase in the carrier (hole) concentration and decrease in carrier mobility,respectively.With the ion fluence increasing,the carrier mobility decreases faster than carrier concentration increases.Therefore,the material resistance increases greatly.
%K CdZnTe
%K electrical properties
%K photoluminescence<br>CdZnTe
%K 电学特性
%K 光致发光
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=BEE8016CB91B5E63&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=708DD6B15D2464E8&sid=FEF59218C1413604&eid=D3EC5D34434DACC5&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12