%0 Journal Article
%T Impurity Distribution of Silicon Direct Bonding<br>Si-Si直接键合的杂质分布
%A Chen Xin''an
%A Huang Qing''an
%A <br>陈新安
%A 黄庆安
%J 半导体学报
%D 2006
%I 
%X There is a thin layer of native oxide between two directly bonded silicon wafers.The silicon extracts impurity from the oxide,thus drastically decreasing the impurity concentration at the interface of SiO2-Si.Based on the modified model of silicon direct bonding,an expression of impurity distribution is derived and verified by theory and experiment.Finally,it is found that the total impurity in silicon with oxide is much less than that without oxide,which decreases the junction depth of p-n+ junction.
%K silicon direct bonding
%K extractive effect
%K native oxide<br>Si-Si直接键合
%K 抽取效应
%K 本征SiO2
%K 直接键合
%K 杂质分布
%K Direct
%K Bonding
%K Silicon
%K Distribution
%K 结深
%K 扩散相
%K 验证
%K 实验
%K 理论
%K 表达式
%K 分布模型
%K 键合片
%K 改进
%K 浓度
%K 效应
%K 抽取
%K 本征
%K 厚度
%K 存在
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D9B72F73399B4738&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=708DD6B15D2464E8&sid=5AE24134D11ADFE8&eid=A944AA21E176D751&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10