%0 Journal Article
%T In situ growth monitoring of AlGaN/GaN distributed Bragg reflectors at 530 nm using a 633 nm laser<br>用633nm的激光器监控峰值波长为 530nm的AlGaN/GaN DBR的生长
%A Wen Feng
%A Huang Lirong
%A Jiang Bo
%A Tong Liangzhu
%A Xu Wei
%A Liu Deming
%A <br>文锋
%A 黄黎蓉
%A 姜波
%A 童梁柱
%A 徐巍
%A 刘德明
%J 半导体学报
%D 2010
%I 
%X The metal-organic chemical vapor deposition (MOCVD) growth of AlGaN/GaN distributed Bragg reflectors (DBR) with a reflection peak at 530 nm was in situ monitored using 633 nm laser reflectometry. Evolutions of in situ reflected reflectivity for different kinds of AlGaN/GaN DBR were simulated by the classical transfer matrix method. Two DBR samples, which have the same parameters as the simulated structures, were grown by MOCVD. The simulated and experimental results show that it is possible to evaluate the DBR parameters from the envelope shape of the in situ reflectivity spectrum. With the help of the 633 nm laser reflectometry, a DBR light emitting diode (LED) was grown. The room temperature photoluminescence spectra show that the reflection peak of the DBR in the LED is within the design region.
%K light emitting diode
%K metal-organic chemical vapor deposition
%K GaN
%K distributed Bragg reflector<br>发光二极管，金属有机化合物气相外延法，GaN，分布布拉格反射
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=B8C8CA95CA7909733DFA39A06DB6C376&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=9CF7A0430CBB2DFD&sid=D285AF30C7D438FA&eid=B31275AF3241DB2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0