%0 Journal Article
%T Hot-Carrier Damage of PMOSFET''''s Identified by Direct Gate Current Measurement<br>通过直接栅电流测量研究PMOSFET''s热载流子损伤
%A Zhang Jincheng
%A Hao Yue
%A Liu Haibo
%A <br>张进城
%A 郝跃
%A 刘海波
%J 半导体学报
%D 2002
%I 
%X The growth laws of hot carrier damage of PMOSFET's during the hot carrier degradation and the high field annealing are studied by direct gate current measurement.An accurate physical explanation for the hot carrier induced device parameter degradation of PMOSFET's is presented.It is shown that the direct gate current measurement is a good method of studying the device damage growth and device parameter degradation.
%K direct gate current measurement
%K hot
%K carrier damage<br>直接栅电流测量
%K 热载流子损伤
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=FE395D62039CD4C8&yid=C3ACC247184A22C1&vid=EA389574707BDED3&iid=CA4FD0336C81A37A&sid=1D0FA33DA02ABACD&eid=0401E2DB1F51F8DE&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=5