%0 Journal Article
%T Compact Threshold Voltage Model for FinFETs
%A Zhang Dawei
%A Tian Lilin
%A Yu Zhiping
%A <br>Zhang Dawei
%A Tian Lilin
%A and Yu Zhiping
%J 半导体学报
%D 2005
%I 
%X A 2D analytical electrostatics analysis for the cross-section of a FinFET (or tri-gate MOSFET) is performed to calculate the threshold voltage.The analysis results in a modified gate capacitance with a coefficient H introduced to model the effect of tri-gates and its asymptotic behavior in 2D is that for double-gate MOSFET.The potential profile obtained analytically at the cross-section agrees well with numerical simulations.A compact threshold voltage model for FinFET,comprising quantum mechanical effects,is then proposed.It is concluded that both gate capacitance and threshold voltage will increase with a decreased height,or a decreased gate-oxide thickness of the top gate,which is a trend in FinFET design.
%K FinFET
%K 2D analytical electrostatic analysis
%K compact model
%K threshold voltage<br>FinFET
%K 2D
%K analytical
%K electrostatic
%K analysis
%K compact
%K model
%K threshold
%K voltage
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=88BE14994F0370C5&yid=2DD7160C83D0ACED&vid=96C778EE049EE47D&iid=E158A972A605785F&sid=06DAE5E1DF7D0B6A&eid=93661EC4C0CCEA67&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10