%0 Journal Article
%T Analysis of Single Event Upset in CMOS SRAMs<br>CMOS SRAM单粒子翻转效应的解析分析
%A HE Chao
%A |hui
%A LI Guo
%A |zheng
%A LUO Jin
%A |sheng
%A LIU En
%A |ke
%A <br>贺朝会
%A 李国政
%A 罗晋生
%A 刘恩科
%J 半导体学报
%D 2000
%I 
%X The time factor in Single Event Upset (SEU) in CMOS SRAMs is analyzed. It is not appropriate only according to the critical charge to determine whether a SEU occurs in a SRAM. The recovery time, the feedback time and charge collection process must be considered. The formulas to calculate the recovery time and the feedback time are presented and some methods to harden CMOS SRAMs against SEU are proposed. The drain potential of the off\|MOSFET is analyzed during the charge collection. A new definition of the critical charge for CMOS SRAM is suggested. A way to determine whether an ion can induce SEU in SRAM is presented.
%K CMOS SRAMs
%K Single Event Upset
%K Criticalcharge
%K Recovery Time
%K Feedback Time<br>CMOSSRAM
%K 单粒子翻转
%K 临界电荷
%K 恢复时间
%K 反馈时间
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=84A4B17D57EFF63F&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=0B39A22176CE99FB&sid=0584DB487B4581F4&eid=4609832E4B5C797B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=7&reference_num=6