%0 Journal Article
%T Breakdown Voltage Analysis for Thin Film SOI RESURF Structure<br>薄膜SOI RESURF结构击穿电压分析
%A LI Wen
%A |hong
%A LUO Jin
%A |sheng
%A <br>李文宏
%A 罗晋生
%J 半导体学报
%D 2000
%I 
%X Based on 2D Poisson equation,an analytical model is given.Meanwhile on the basis of the model,a novel approach for the breakdown voltage analysis of thin film SOI RESURF structure is proposed.Using this method,the relation between the breakdown voltage of thin film SOI RESURF structure with the longer drift region and the doping density of the drift region is calculated,and the influence of the field SiO\-2 interface charge density on the breakdown voltage and the critical doping density of the drift region is analyzed.The concept of the critical field SiO\-2 interface charge density is firstly presented,and the influence of the doping density of the drift region on it is modeled.The analytical results agree with the simulation of MEDICI well.The method is the base of the optimum design for the breakdown voltage of thin film SOI RESURF structure with the longer drift region.
%K SOI
%K RESURF
%K Breakdown Voltage<br>SOI
%K RESURF
%K 击穿电压
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6A24ADB14EC3254D&yid=9806D0D4EAA9BED3&vid=659D3B06EBF534A7&iid=0B39A22176CE99FB&sid=8575BEDA702C4B7C&eid=BBF7D98F9BEDEC74&journal_id=1674-4926&journal_name=半导体学报&referenced_num=4&reference_num=8