%0 Journal Article
%T Modeling of Subthreshold Characteristics of Deep-Submicrometer FD Devices<br>深亚微米FD-SOI器件亚阈模型
%A 程彬杰
%A 邵志标
%A 唐天同
%A 沈文正
%A 赵文魁
%J 半导体学报
%D 2001
%I 
%X A third order quasi cubic silicon film potential function in the vertical direction is assumed for FD SOI device,and the surface potential formula is obtained via solving the two dimensional Poisson equation in the subthreshold region.The surface potential model in the deep submicrometer FD device is presented by introducting some new parameters to describe the DIBL effect.Based on it,a drain current model in the subthreshold region is developed,which can predict the accurate subthreshold drain current characteristics.The models are verified by comparing with the two dimensional device simulator,MEDICI.
%K surface potential
%K DIBL effect
%K model of subthreshold region
%K FD device<br>表面势
%K 漏感应势垒降低效应
%K 亚阈区模型
%K 全耗尽MOS器件
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=CB19E098768371E4&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=DF92D298D3FF1E6E&sid=51FE5F6F4794AD16&eid=FE68044BBD4BDA5F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=4&reference_num=5