%0 Journal Article
%T Effects of Annealing Atmosphere on Bulk Micro-Defects in Czochralski Silicon Wafer<br>热处理气氛对直拉硅单晶中体缺陷的影响
%A Cui Can
%A Yang Deren
%A Ma Xiangyang
%A <br>崔灿
%A 杨德仁
%A 马向阳
%J 半导体学报
%D 2007
%I 
%X The effect of annealing atmosphere on the behavior of oxygen precipitates and their induced defects in Czochralski silicon during high temperature annealing is investigated.The silicon wafers were subjected to a low-high two-step annealing followed by a high-temperature annealing in five different atmospheres.It was found that the amount of dissolved oxygen precipitates in the high temperature annealing is independent of the annealing atmospheres,whereas the annealing atmospheres influence the distribution of the bulk micro-defects (BMDs) in the cross section of the wafers.It was confirmed that the high-temperature annenaling in various atmospheres induced different point defects in the wafer and thus affected the distribution of BMDs.This investigation could be beneficial for the selection of annealing atmosphere in the internal gettering process during the manufacture of the integrated circuits.
%K Czochralski silicon
%K oxygen precipitates
%K internal gettering<br>直拉硅
%K 氧沉淀
%K 内吸杂
%K 热处理
%K 直拉硅单晶
%K 体缺陷
%K 影响
%K Silicon
%K Wafer
%K Czochralski
%K Bulk
%K Atmosphere
%K Annealing
%K 意义
%K 指导
%K 的选择
%K 保护气氛
%K 吸杂工艺
%K 集成电路生产
%K 点缺陷
%K 机理
%K 现象
%K 分布
%K 中处理
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=21862D1E110E1622&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=B31275AF3241DB2D&sid=461E94ABCF58C63F&eid=B84F2E0A99FDC89A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12