%0 Journal Article
%T Temperature Distribution of Full-Thermal path of VDMOS<br>VDMOS全热程的温度分布
%A Li Zhaoji/University of Electronic Science
%A Technology of China
%A ChengduYu Hongquan/University of Electronic Science
%A Technology of China
%A ChengduChen Xingbi/University of Electronic Science
%A Technology of China
%A Chengdu
%A <br>李肇基
%A 俞洪全
%A 陈星弼
%J 半导体学报
%D 1990
%I 
%X An electronic model of the full-thermal path of VDMOS is proposed and the temperaturedistribution of the device including active region, substrate,support and heat sink is calculatedby the electric network method.On the other hand, the approach taken in the paper is tosolve a complete set of partial differential equations governing the device behavior understeady-state operation and nonisothermal conditions. The results from the two approaches arein excellent agreement.
%K electronic model
%K a partial differential equations
%K temperature distribution<br>VDMOS
%K 温度分布
%K 全热程
%K 计算
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=DA268F9832711F0C&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=B31275AF3241DB2D&sid=8D75AD3BD0D1BCC5&eid=78976D931AD1540F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=1