%0 Journal Article
%T Optical Characterization of Interface Behavior in GaAs-GaAlAs Multiple Quantum Well Structures<br>GaAs-AaAlAs多量子阱界面特性的光学研究
%A 徐仲英
%A 徐强
%A 郑宝真
%A 许继宗
%J 半导体学报
%D 1990
%I 
%X The interface behavior in MBE Grown GaAs-GaAlAs MQW structures has been studied bymeans of photoluminescence and excitation spectrosoopy under extremely low excitation.Differentspectroscopic behavior has been found in different samples.For a sample with singlemonolayer fluctuation, a strong competition between intrinsic exciton luminescence and impurity-relatedemission is observed. However, for the samples with larger fluctuation, the interfacedisorder may become trapping center of excitons, preventing the exciton intralayermigration to impurities, resulting in a single broad intrinsic luminescence peak. On the otherhand the degradation of smoothness of the interface may accumulate impurities on interface,which gives a strong interface-related extrisic emission in the spectrum.
%K Quantum well
%K Interface behav or
%K Optical properties<br>量子阱
%K 界面特性
%K 光学性质
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=60288DE8762AF236&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=B31275AF3241DB2D&sid=1FF3CD54EFC256A1&eid=65C08888CCE4801E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=1&reference_num=0