%0 Journal Article
%T An Analytical Temperature-Dependent Kink Effect Model of PD SOI NMOSFET<br>PD SOI NMOSFET翘曲效应的温度模型
%A ZHANG Hai peng
%A WEI Tong li
%A FENG Yao lan
%A YAO Wei
%A SONG An fei
%A <br>张海鹏
%A 魏同立
%A 冯耀兰
%A 姚炜
%A 宋安飞
%J 半导体学报
%D 2001
%I 
%X An analytical temperature dependent kink effect model of PD(Partially Depleted) SOI NMOSFET are described,whose physical structure consists of a top NMOSFET and a bottom parasitical BJT.Based on the dynamic balance between the currents flowing through the body emitter and drain body junctions at a given temperature,it is found when the dynamic balance conditions are satisfied,the hole accumulation generated by impact ionization gets saturated.Through the analytical iteration,the voltage drop of body emitter junction and all current components through the body emitter and drain body junctions are obtained.Thus,the analytical temperature dependent model of the kink is derived and experimentally verified.The simulated results agree with our experimental results very well.
%K PD SOI NMOSFET
%K kink effect
%K analytical temperature
%K dependent model
%K dynamic equilibrium<br>PD
%K SOI
%K NMOSFET
%K 翘曲效应
%K 温度解析模型
%K 动态平衡
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=7976BD8F32F855E8&yid=14E7EF987E4155E6&vid=BC12EA701C895178&iid=F3090AE9B60B7ED1&sid=7E01AF4ED17ED9B3&eid=8560D04B70E571A6&journal_id=1674-4926&journal_name=半导体学报&referenced_num=2&reference_num=12