%0 Journal Article
%T Threshold voltage adjustment of organic thin film transistor by introducing a polysilicon floating gate<br>引入悬浮栅对有机薄膜晶体管的阈值电压进行调整
%A Wu Chenglong
%A Yang Jianhong
%A Cai Xueyuan
%A Shan Xiaofeng
%A <br>吴承龙
%A 杨建红
%A 蔡雪原
%A 单晓锋
%J 半导体学报
%D 2010
%I 
%X The structure of organic thin film transistors (OTFTs) is optimized by introducing a floating gate into the gate dielectric to reduce the threshold voltage of OTFTs. Then the optimized device is simulated, and the simulation results show that the threshold voltage of optimized device is reduced by about 10 V. The reduction of the threshold voltage is helpful and useful for the application of OTFTs in many areas. In addition, this way of reducing the threshold voltage of OTFT is compatible with traditional silicon technology and can be used in manufacturing.
%K 并五苯有机薄膜晶体管
%K 器件优化
%K Pool-Frenkel迁移率
%K 模拟
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=1F61C6E0EC4385FCA5E5E121117602F6&yid=140ECF96957D60B2&vid=4AD960B5AD2D111A&iid=38B194292C032A66&sid=C0EFCA68F1CAAF14&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0