%0 Journal Article
%T Electronic Structure and Characteristic of Co Chemisorptionon Si (100) Surface<br>Co在Si(100)表面化学吸附的电子结构和性质
%A Wei Shuyi
%A Ma Li
%A Yang Zongxian
%A Dai Xianqi
%A Zhang Kaiming
%A <br>危书义
%A 马丽
%A 杨宗献
%A 戴宪起
%A 张开明
%J 半导体学报
%D 2003
%I 
%X The adsorption of one monolayer Co atoms on an ideal Si (100) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method.Energies of adsorption systems of a Co atom on different sites are calculated.It is found that the adsorbed Co atoms are more favorable on C site (four-fold site) than on any other sites on Si(100) surface and a mixed layer of Co and might exist at Co/Si(100) interface.The charge transfer and the layer projected density of states are also studied.
%K chemisorption
%K cobalt
%K silicon
%K low index single crystal surfaces
%K metallic films<br>化学吸附
%K 钴
%K 硅
%K 低指数单晶面
%K 金属薄膜
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=E7777AC695FA99D3&yid=D43C4A19B2EE3C0A&vid=B91E8C6D6FE990DB&iid=F3090AE9B60B7ED1&sid=FC27EB98080C89E6&eid=42AB3C691163F5B1&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12