%0 Journal Article
%T Influence of Residual Impurity on Optical Absorption in Hg_(0.8)Cd_(0.2)Te Crystal<br>剩余杂质对Hg_(0.8)Cd_(0.2)Te晶体光吸收的影响
%A Wang Jue/
%A <br>王珏
%A 陆卫
%A 刘激鸣
%A 俞振中
%A 汤定元
%J 半导体学报
%D 1990
%I 
%X The infrared transmission spectra of in getterec and ungettered Hg_(0.8)Cd_(0.2)Te sampleshave been compared. It is found that the long wave absorption was relatively reduced and theabsorption edges were moved to the short wave direction after gettering. The experimental phenomenahave been explained according to the process of residual impurity related optical absorption.In addition, the explaination has also been verified in acceptor doped Hg_(0.8)Cd_(0.2)Tewith mercury vacancies.
%K Hg_(0
%K 8)Cd_(0
%K 2)Te
%K Residual impurity
%K Mercury vacancy
%K Optical absorption<br>Hg_(0.8)Cd_(0.2)Te
%K 剩余杂质
%K 汞空位
%K 光吸收
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=DF2699E29C02B242&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=59906B3B2830C2C5&sid=114891522AE71A91&eid=85A6AA3FF013E1BF&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0