%0 Journal Article
%T Analysis of Pull-In Voltage of RF MEMS Switches<br>RF MEMS开关吸合电压的分析
%A Dong Qiaohua
%A Liao Xiaoping
%A Huang Qing''''an
%A Huang Jianqiu
%A <br>董乔华
%A 廖小平
%A 黄庆安
%A 黄见秋
%J 半导体学报
%D 2008
%I 
%X The pull-in voltage of RF MEMS switches at different actuations is presented.When the actuation voltage is a pulse voltage,the movement of the switch beam is in a vibration state rather than quasi-static,so the pull-in voltage is different from the quasi-static condition and is called dynamic pull-in voltage.It is about 92% of the quasi-static pull-in voltage.Following the simple formula of the spring coefficient of a beam and the exact formula of the capacitor for the switch,the quasi-static and dynamic pull-in voltages of the clamped-clamped beam switch on CPW are analyzed,and the damping effect is also included.The damping reduces the difference between the two kinds of pull-in voltages.Finally,the influence of the RF input power on the pull-in voltage is analyzed.The input power decreases the pull-in voltage,reducing the pull-in voltage to zero at a certain power,and then making the switch self-actuate.
%K RF MEMS
%K switch
%K pull-in voltage
%K quasi-static
%K dynamic
%K damping<br>RF
%K MEMS
%K 开关
%K 吸合电压
%K 准静态
%K 动态
%K 阻尼
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=976506BEB8DC8F1E7A29BD7ED480A948&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=CA4FD0336C81A37A&sid=D5C9DC4EF2F78008&eid=ED01F5AE50BE09C0&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14