%0 Journal Article
%T Improved optical performance of GaN grown on pattered sapphire substrate<br>图形衬底上MOCVD生长光学性质改进的GaN
%A Yao Guangrui
%A Fan Guanghan
%A Li Shuti
%A Zhang Yong
%A Zhou Tianmin
%A <br>姚光锐
%A 范广涵
%A 李述体
%A 章勇
%A 周天民
%J 半导体学报
%D 2009
%I 
%X An improved GaN film with low dislocation density was grown on a C-face patterned sapphire substrate (PSS) by metalorganic chemical vapor deposition (MOCVD). The vapor phase epitaxy starts from the regions with no etched pits and then spreads laterally to form a continuous GaN film. The properties of the GaN film have been investigated by double crystal X-ray diffraction (DCXRD), atomic force microscopy (AFM) and photoluminescence (PL), respectively. The full-width at half-maximum (FWHM) of the X-ray diffraction curves (XRCs) for the GaN film grown on PSS in the (0002) plane and the (102) plane are as low as 312.80 arcsec and 298.08 acrsec, respectively. The root mean square (RMS) of the GaN film grown on PSS is 0.233 nm and the intensity of the PL peak is comparatively strong.
%K double crystal X-ray diffraction
%K atomic force microscopy
%K photoluminescence
%K GaN
%K wet-etching<br>X射线双晶衍射
%K 原子力显微镜
%K 光致发光
%K GaN
%K 湿法刻蚀
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=343AC91C2438B99EC426D64B850EEE62&yid=DE12191FBD62783C&vid=340AC2BF8E7AB4FD&iid=CA4FD0336C81A37A&sid=9991E0396F97DD1D&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=0