%0 Journal Article
%T Interaction of Co with Si and SiO_2 during RTA<br>Co与Si和SiO_2在快速热退火中的反应
%A Chen Weide/Institute of Semiconductors
%A Academia Sinica
%A Laboratory for Surface Physics
%A Academia Sinica
%A BeijingCui Yude/Institute of Semiconductors
%A Academia Sinica
%A Laboratory for Surface Physics
%A Academia Sinica
%A BeijingXu Zheujia/Institute of Semiconductors
%A Academia Sinica
%A Laboratory for Surface Physics
%A Academia Sinica
%A BeijingTao Jiang/Institute of Microelectronics
%A Peking University
%A <br>陈维德
%A 崔玉德
%A 许振嘉
%A 陶江
%J 半导体学报
%D 1990
%I 
%X 利用四探针、AES、XRD、XPS和SEM等技术研究了快速热退火中Co与Si和SiO_2反应动力学、相序、层的形貌。测量了薄层电阻与退火温度和时间的关系。结果表明,随退火温度的升高,淀积在硅衬底上的钴膜逐步转变为Co_2Si、CoSi_(?)最后完全转化为CoSi_2。CoSi_2对应的电阻率最低。Co与SiO_2不会反应,即使在1050℃的高温下也没有观察到任何形成钴硅化物的证据。
%K Co
%K Si
%K RTA
%K AES<br>钴
%K 硅
%K 快速退火
%K 俄歇电子谱
%K SiO2
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=8B386B0A18766F383F3412D6A29AE091&yid=8D39DA2CB9F38FD0&vid=708DD6B15D2464E8&iid=708DD6B15D2464E8&sid=EE7D0B10C851F35D&eid=461E94ABCF58C63F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=1