%0 Journal Article
%T A thru-reflect-line calibration for measuring the characteristics of high power LDMOS transistors<br>测量大功率LDMOS晶体管特性的TRL校准方法研究
%A Wang Shuai
%A Li Ke
%A Jiang Yibo
%A Cong Mifang
%A Du Huan
%A Han Zhengsheng
%A <br>王帅
%A 李科
%A 姜一波
%A 丛密芳
%A 杜寰
%A 韩郑生
%J 半导体学报
%D 2013
%I 
%X The impedance and output power measurements of LDMOS transistors are always a problem due to their low impedance and lead widths. An improved thru-reflect-line (TRL) calibration algorithm for measuring the characteristics of L-band high power LDMOS transistors is presented. According to the TRL algorithm, the individual two-port S parameters of each fixture half can be obtained. By de-embedding these S parameters of the test fixture, an accurate calibration can be made. The improved TRL calibration algorithm is successfully utilized to measure the characteristics of an L-band LDMOS transistor with a 90 mm gate width. The impedance of the transistor is obtained, and output power at 1 dB compression point can reach as much as 109.4 W at 1.2 GHz, achieving 1.2 W/mm power density. From the results, it is seen that the presented TRL calibration algorithm works well.
%K thru-reflect-line
%K lateral double-diffused MOSFET
%K low impedance test fixture
%K impedance
%K output power<br>TRL，LDMOS，低阻抗夹具，阻抗，输出功率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4D6BB6A422263A45248ACEA4C77DF5BC&yid=FF7AA908D58E97FA&vid=339D79302DF62549&iid=38B194292C032A66&sid=B9AA7F0EDC1BFEE1&eid=94C357A881DFC066&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9