%0 Journal Article
%T 1.01μm Gate-Length GaAs MHEMT Devices and SPDT Switch MMICs<br>1.0μm栅长GaAs基MHEMT器件及SPDT开关MMIC
%A Xu Jingbo
%A Li Ming
%A Zhang Haiying
%A Wang Wenxin
%A Yin Junjian
%A Liu Liang
%A Li Xiao
%A Zhang Jian
%A Ye Tianchun
%A <br>徐静波
%A 黎明
%A 张海英
%A 王文新
%A 尹军舰
%A 刘亮
%A 李潇
%A 张健
%A 叶甜春
%J 半导体学报
%D 2008
%I 
%X 利用MBE外延材料和接触式光学光刻方式,成功制备出1.0μm栅长GaAs基MHEMT器件,分别蒸发Pt/Ti/Pt/Au和Ti/Pt/Au作为栅电极金属.获得了优越的DC和RF性能,Pt/Ti/Pt/Au和Ti/Pt/Au MHEMT器件的gm为502(503)mS/mm,JDss为382(530)mA/mm,VT为0.1(-0.5)V,fT和fmax分别为13.4(14.8),17.0(17.5)GHz.利用单片集成增强/耗尽型GaAs基MHEMT器件制备出九阶环型振荡器,直流电压为1.2V时,振荡频率达到777.6MHz,门延迟时间为71.4ps.利用Ti/Pt/Au MHEMT器件设计并制备出了DC-100Hz单刀双掷(SPDT)关MMIC,其插入损耗、隔离度、输入输出回波损耗分别优于2.93,23.34和20dB.
%K MHEMT
%K Pt/Ti/Pt/Au
%K Ti/Pt/Au
%K SPDT
%K MMIC
%K MHEMT
%K Pt/Ti/Pt/Au
%K Ti/Pt/Au
%K SPDT
%K MMIC<br>MHEMT
%K Pt/Ti/Pt/Au
%K Ti/Pt/Au
%K SPDT
%K MMIC
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2573796B84B3DB779476D78075D7A1FD&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=E158A972A605785F&sid=C6FC2A9EA7E6C4B9&eid=93661EC4C0CCEA67&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=5