%0 Journal Article
%T Preparation of Si/SiO2 Optical Thin Film by Double Source Electron Beam Evaporation Technology<br>双源电子束蒸发制备Si/SiO2光学薄膜的工艺
%A Zhao Miao
%A Zhou Daibing
%A Tan Manqing
%A Wang Xiaodong
%A Wu Xuming
%A <br>赵妙
%A 周代兵
%A 谭满清
%A 王晓东
%A 吴旭明
%J 半导体学报
%D 2006
%I 
%X A technology for preparing optical thin films is introduced.A Si/SiO2 mixed thin film is evaporated onto K9 glass by double source electron beam evaporation.The results show that the reflectivity index of the mixed thin film changes with the proportion of the Si and SiO2 evaporation rate,and its value changes between that of Si and SiO2.The rules between the proportion of the evaporation rates and the reflectivity index is obtained through the experiment.The advantages of the technology are discussed.
%K thin film
%K dielectric optical thin film
%K double source electron beam evaporation
%K reflectivity index
%K evaporation rate<br>薄膜
%K 介质光学膜
%K 双源电子束蒸发
%K 折射率
%K 蒸发速率
%K 双源
%K 电子束蒸发
%K 蒸发制备
%K 光学薄膜
%K 工艺
%K Preparation
%K Technology
%K Electron
%K Beam
%K Evaporation
%K Source
%K Double
%K 淀积
%K 规律
%K 混合膜
%K 实验
%K 变化
%K 范围
%K 大小
%K 折射率
%K 膜层
%K 比例
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=3C5E493DEAA35375&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=9CF7A0430CBB2DFD&sid=19C298A6E9FC7563&eid=87A9A510C01DA8C7&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11