%0 Journal Article
%T A Highly Symmetrical Capacitive Accelerometer by Silicon Four-Layer Bonding<br>一种硅四层键合的高对称电容式加速度传感器
%A Xu Weihe
%A Che Lufeng
%A Li Yufang
%A Xiong Bin
%A Wang Yuelin
%A <br>徐玮鹤
%A 车录锋
%A 李玉芳
%A 熊 斌
%A 王跃林
%J 半导体学报
%D 2007
%I 
%X This paper presents a highly symmetrical capacitive accelerometer fabricated by four silicon wafers bonded together.The cantilever-mass structure is fabricated by bonding two wafers together by silicon fusion,and the two static electrodes are bonded later by low-temperature glass melting.Through the silicon bonding,we achieve a wafer-level vacuum package,and the wire-bonding PAD is made after the fabrication is complete.The dimensions of the chip are 6.8mm×5.6mm×1.68mm,and those of the mass are 3.2mm×3.2mm×0.84mm.The test results of the sensor show that the sensitivity is about 6pF/g,the Q value is 35,the resonant frequency is 489Hz,and the leakage is less than 0.1e-9cm3/s.
%K capacitive accelerometer
%K silicon bonding
%K wafer-level vacuum package<br>电容式加速度传感器
%K 硅/硅键合
%K 圆片级真空封装
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5646F94D35B54F6F4149FBAD06F360CA&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=F3090AE9B60B7ED1&sid=28132669ED57E050&eid=967EC9935A34C4F3&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=7