%0 Journal Article
%T Etching Si Wafer Using Atmospheric Pressure RF Cold Plasma Jet<br>常压射频冷等离子体刻蚀硅的研究
%A Zhao Lingli
%A Duan Xiaojin
%A Yin Minghui
%A Xu Xiangyu
%A Wang Shouguo
%A <br>赵玲利
%A 段小晋
%A 尹明会
%A 徐向宇
%A 王守国
%J 半导体学报
%D 2007
%I 
%X A new kind of discharging device with a RF cold plasma jet at atmospheric pressure is introduced,and it is utilized to conduct experimental research on silicon-etching.The characteristics of the etching rate depend on the input power,gas flow,and temperature of Si wafers.The maximal etching rate is 390nm/min.The etching effect is characterized by step instrument,optical microscopy,and SEM.Excellent etching homogeneity and satisfactory anisotropy can be obtained during material etching with this device.These results indicate that the silicon-etching operation with this atmospheric pressure device is simple and causes no material surface damage.
%K atmospheric pressure
%K RF
%K plasma etch
%K silicon<br>常压
%K 射频
%K 等离子体刻蚀
%K 硅
%K 射频
%K 冷等离子体
%K 蚀硅
%K 研究
%K Plasma
%K Jet
%K Cold
%K Atmospheric
%K Pressure
%K Si
%K Wafer
%K 损伤
%K 材料表面
%K 操作
%K 结果
%K 均匀性
%K 检测与分析
%K 效果
%K 刻蚀速率
%K 扫描电镜
%K 显微镜
%K 台阶仪
%K 利用
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5646F94D35B54F6F6F3D6E445936F97D&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=F3090AE9B60B7ED1&sid=633354CC2908E635&eid=266729317CF80522&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=14