%0 Journal Article
%T Effect of Power on Property of Plasma in Polysilicon Gate over Etch Process<br>90nm硅栅过刻蚀工艺中功率对等离子体性质的影响
%A Zhang Qingzhao
%A Xie Changqing
%A Liu Ming
%A Li Bing
%A Zhu Xiaoli
%A <br>张庆钊
%A 谢长青
%A 刘明
%A 李兵
%A 朱效立
%J 半导体学报
%D 2007
%I 
%X The relations between the parameters of plasma and those of RF power and gas flow were analyzed under the conditions of over etch step in semiconductor plasma etching,by Langmuir probe.The results show that as the RF power was increasing,the RF couple coefficient was comparatively stable.When in a local heating state,most of the electrons were in an adhesive status.The distribution of power couple space in the chamber can be improved as the RF power increases.These results can help to develop plasma dry etching.
%K plasma
%K sheath theory
%K dry etching
%K Langmuir probe<br>等离子体
%K 鞘层理论
%K 干法刻蚀
%K 朗谬尔探针
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5646F94D35B54F6F6F6B13D5F9B4015D&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=F3090AE9B60B7ED1&sid=371466E036DA0FD9&eid=B0D0FAC45E96482A&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11