%0 Journal Article
%T A Novel Fully-Depleted Dual-Gate MOSFET<br>一种新型全耗尽双栅MOSFET
%A Zhang Guohe
%A Shao Zhibiao
%A Han Bin
%A Liu Derui
%A <br>张国和
%A 邵志标
%A 韩彬
%A 刘德瑞
%J 半导体学报
%D 2007
%I 
%X 提出一种新型全耗尽双栅MOSFET,该器件具有异质栅和LDD结构.异质栅由主栅和两个侧栅组成,分区控制器件的沟道表面势垒.通过Tsuprem-4工艺模拟和Medici器件模拟验证表明,与普通双栅全耗尽SOI相比,该器件获得了更好的开态/关态电流比和亚阈值斜率.在0.18μm工艺下,开态/关态电流比约为1010,亚阈值斜率接近60mV/dec.
%K hetero-material gate
%K on/off current ratio
%K sub-threshold slope
%K SOI FET<br>异质栅
%K 关态电流
%K 亚阈值斜率
%K SOI场效应晶体管
%K hetero-material
%K gate
%K on/off
%K current
%K ratio
%K sub-threshold
%K slope
%K SOI
%K FET
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=EE93C7276DEA83A7&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=9CF7A0430CBB2DFD&sid=D98C4F25072149E5&eid=196264D95F295743&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=20