%0 Journal Article
%T Properties of a Ni-FUSI gate formed by the EBV method and one-step RTA<br>采用电子束蒸发方法结合一步快速退火制备的Ni-FUSI栅性能研究
%A Zhang Youwei
%A Xu Dawei
%A Wan Li
%A Wang Zhongjian
%A Xia Chao
%A Cheng Xinhong
%A Yu Yuehui
%A <br>张有为
%A 徐大伟
%A 万里
%A 王中健
%A 夏超
%A 程新红
%A 俞跃辉
%J 半导体学报
%D 2012
%I 
%X Nickel fully silicided (Ni-FUSI) gate material has been fabricated on a HfO2 surface to form a Ni-FUSI gate/HfO2/Si/Al (MIS) structure by using an ultra-high vacuum e-beam evaporation (EBV) method followed by a one step rapid thermal annealing (RTA) treatment. X-ray diffraction (XRD) and Raman spectroscopy were used to reveal the microstructures and electrical properties of the MIS structure. Results show that a one step post RTA treatment is enough to promote the full reaction of nickel silicide, compared with multiple RTA treatments. Furthermore, the HfO2 gate dielectric film is sensitive to heat treatment, and multiple RTA treatments can damage the electrical properties of the HfO2 film rather than improve them. By optimization of the sample fabrication technique, the MIS capacitor produces good high-frequency capacitance-voltage curves with a hysteresis of 30 mV, a work function of about 5.44-5.53 eV and leakage current density of only 1.45 × 10-8 A/cm2 at -1 V gate bias.
%K Ni-FUSI gate
%K EBV
%K HfO2<br>镍全硅化物栅、电子束蒸发、氧化铪栅介质
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=F1E2B134F3CCFA082A3A52541D11C1DF&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=38B194292C032A66&sid=E4DDF4E0B4B2C863&eid=38B194292C032A66&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=20