%0 Journal Article
%T Studies on the Butt-Joint of a InGaAsP-Waveguide Realized with Metalorganic Vapor Phase Epitaxy<br>MOCVD实现InGaAsP波导对接生长的研究
%A Zhang Ruikang
%A Dong Lei
%A Yu Yonglin
%A Wang Dingli
%A Zhang Jing
%A Chen Lei
%A Jiang Shan
%A <br>张瑞康
%A 董雷
%A 余永林
%A 王定理
%A 张靖
%A 陈磊
%A 江山
%J 半导体学报
%D 2008
%I 
%X An InGaAsP waveguide is integrated laterally to MQW using LP-MOCVD butt-joint technology. High quality for the regrowth interface and material is achieved.The loss of the butt-jointed waveguide is 7cm-1.This demonstrates the applicability of butt-joint technology in fabricating high quality future photonic integrated circuits.
%K MOCVD
%K butt-joint growth
%K waveguide<br>MOCVD
%K 对接生长
%K 波导
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=072655F7A6C36634F11734FB14802DE2&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=B31275AF3241DB2D&sid=A60ED5C9472B8BEB&eid=4206C58D935377EA&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9