%0 Journal Article
%T A Novel Equivalent Circuit Model of GaAs PIN Diodes<br>GaAs PIN二极管的新等效电路模型
%A Wu Rufei
%A Zhang Haiying
%A Yin Junjian
%A Li Xiao
%A Liu Huidong
%A Liu Xunchun
%A <br>吴茹菲
%A 张海英
%A 尹军舰
%A 李潇
%A 刘会东
%A 刘训春
%J 半导体学报
%D 2008
%I 
%X A novel equivalent circuit model for a GaAs PIN diode is presented based on physical analysis. The diode is divided into three parts., the p n- junction, the I-layer, and the n- n junction, which are modeled separately. The entire model is then formed by combining the three sub-models. In this way, the model's accuracy is greatly enhanced. Furthermore, the corresponding parameter extraction method is easy, requiring no rigorous experiment or measurement. To validate this newly proposed model, fifteen groups of diodes are fabricated. Measurement shows that the model exactly represents behavior of GaAs PIN diodes under both forward and reversely biased conditions.
%K GaAs PIN diodes
%K model
%K parameter extraction<br>GaAs
%K PIN二极管
%K 模型
%K 参数提取
%K GaAs
%K PIN
%K diodes
%K model
%K parameter
%K extraction
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=408575A050C6D1A9F326092D657C8A72&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=E158A972A605785F&sid=B7DE0F3CA34DA149&eid=5AE7FA263C8A6D65&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=8