%0 Journal Article
%T Models and Related Mechanisms of NBTI Degradation of 90nm pMOSFETs<br>90nm pMOSFETs NBTI退化模型及相关机理
%A Cao Yanrong
%A Ma Xiaohu
%A Hao Yue
%A Yu Lei
%A Zhu Zhiwei
%A Chen Haifeng
%A <br>曹艳荣
%A 马晓华
%A 郝跃
%A 于磊
%A 朱志炜
%A 陈海峰
%J 半导体学报
%D 2007
%I 
%X We investigate the negative bias temperature instability (NBTI) of 90nm pMOSFETs under various temperatures and stress gate voltages (Vg).We also study models of the time (t),temperature (T),and stress Vg dependence of 90nm pMOSFETs NBTI degradation.The time model and temperature model are similar to previous studies,with small difference in the key coefficients.A power-law model is found to hold for Vg,which is different from the conventional exponential Vg model.The new model is more predictive than the exponential model when taking lower stress Vg into account.
%K NBTI
%K 90nm
%K pMOSFETs
%K 模型
%K NBTI
%K 90nm
%K pMOSFETs
%K model<br>NBTI
%K 90nm
%K pMOSFETs
%K 模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=6586D7E9780AB55A&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=94C357A881DFC066&sid=D559883475316B44&eid=B10D796AE1B3FEBD&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10