%0 Journal Article
%T Energy Band Design for a Terahertz Si/SiGe Quantum Cascade Laser<br>太赫兹Si/SiGe量子级联激光器的能带设计
%A Lin Guijiang
%A Lai Hongkai
%A Li Cheng
%A Chen Songyan
%A Yu Jinzhong
%A <br>林桂江
%A 赖虹凯
%A 李成
%A 陈松岩
%A 余金中
%J 半导体学报
%D 2006
%I 
%X The eigenenergies of confined states in Si/SiGe/Si quantum wells are calculated with nextnano3 software for the design of terahertz Si/SiGe QCLs.The results indicate that the structure of the Si/SiGe quantum cascade may be optimized by using a strain-symmetric heterostructure consisting of a Si_ 1-xGe_x(0.27
%K Si/SiGe
%K quantum cascade laser
%K intersubband interwell transitions
%K nextnano3<br>Si/SiGe
%K 量子级联激光器
%K 子带阱间跃迁
%K nextnano3
%K 太赫兹
%K SiGe
%K 量子级联激光器
%K 能带设计
%K Terahertz
%K Design
%K Band
%K Energy
%K 激光器结构
%K 优化
%K 异质结构
%K 变级
%K 对称
%K 构成
%K 垒宽
%K 合金
%K 量子阱宽度
%K 组分
%K 结果
%K 有源区
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=C11C07F4C2E62B93&yid=37904DC365DD7266&vid=DB817633AA4F79B9&iid=94C357A881DFC066&sid=DE4E739E935BD9A7&eid=753F7A67351FADCC&journal_id=1674-4926&journal_name=半导体学报&referenced_num=3&reference_num=12