%0 Journal Article
%T Characterization of Gate Dielectric Using Oxides Generated by in situ Steam Generation<br>基于原位水汽生成工艺的栅氧化膜特性
%A Sun Ling
%A Yang Steve
%A <br>孙凌
%A 杨华岳
%J 半导体学报
%D 2008
%I 
%X A new process for gate dielectric fabrication named in situ steam generation (ISSG) is reported.Based on the Deal-Grove model,an oxidation mechanism is proposed to break the Si-Si bond by an active atomic O and form a Si-O-Si bond during the oxidation process.The breakdown characteristics are investigated through a MOS-capacitor for both ISSG and furnace wet oxidation.The gate dielectric material generated by ISSG oxidation has a superior electrical performance owing to sufficient oxidation of weak Si-Si bonds relative to furnace wet oxidation,indicating a promising application in sub-micron IC device manufacturing.
%K ISSG
%K gate dielectric
%K breakdown<br>原位水汽生成
%K 栅介质
%K 击穿
%K ISSG
%K gate
%K dielectric
%K breakdown
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=2ED73BB0C0B29E67CBCEEBC8BE09CA95&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=38B194292C032A66&sid=A94616C4391AA5EF&eid=07C6E4664BB7C5DA&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11