%0 Journal Article
%T Study of radiation-induced leakage current between adjacent devices in a CMOS integrated circuit<br>辐照诱发CMOS电路器件间漏电流的理论研究
%A Ding Lili
%A Guo Hongxi
%A Chen Wei
%A Fan Ruyu
%A <br>丁李利
%A 郭红霞
%A 陈伟
%A 范如玉
%J 半导体学报
%D 2012
%I 
%X Radiation-induced inter-device leakage is studied using an analytical model and TCAD simulation. There were some different opinions in understanding the process of defect build-up in trench oxide and parasitic leakage path turning on from earlier studies. To reanalyze this problem and make it beyond argument, every possible variable is considered using theoretical analysis, not just the change of electric field or oxide thickness independently. Among all possible inter-device leakage paths, parasitic structures with N-well as both drain and source are comparatively more sensitive to the total dose effect when a voltage discrepancy exists between the drain and source region. Since N-well regions are commonly connected to the same power supply, these kinds of structures will not be a problem in a real CMOS integrated circuit. Generally speaking, conduction paths of inter-device leakage existing in a real integrated circuit and under real electrical circumstances are not very sensitive to the total ionizing dose effect.
%K Total ionizing dose effect
%K inter-device leakage current
%K CMOS IC<br>总剂量效应
%K 器件间漏电流
%K CMOS电路
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=649CF1A01F52D5714A9BF43CFC335627&yid=99E9153A83D4CB11&vid=27746BCEEE58E9DC&iid=B31275AF3241DB2D&sid=1F88074D537BEA38&eid=B31275AF3241DB2D&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=15