%0 Journal Article
%T Electrical Characteristics and Reliability of Ultra-Thin Gate Oxides (<2nm) with Plasma Nitridation<br>基于等离子体氮化工艺的超薄栅氧化膜的电学特性和可靠性
%A Sun Ling
%A Liu Wei
%A Duan Zhenyong
%A Xu Zhongyi
%A Yang Huayue
%A <br>孙凌
%A 刘薇
%A 段振永
%A 许忠义
%A 杨华岳
%J 半导体学报
%D 2008
%I 
%X MMT (modified magnetron typed) plasma nitridation and NO anneal are used to treat ultra-thin gate oxides in MOSFETs (metal-oxide-semiconductor field effect transistors).Dual-peak and single-peak N distributions are formed after nitridation.The dual-peak N distribution shows excellent electrical properties and superior reliability in terms of drain current,channel carrier mobility,and TDDB characteristics.The results indicate a means to extend silicon oxynitride as a promising gate dielectric for developing ultralarge scale integrated (ULSI) technology.
%K plasma nitridation
%K mobility
%K TDDB<br>等离子体氮化
%K 迁移率
%K 时变击穿
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=86B50B17B958F5E6EE1FCFBC873A43EE&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=708DD6B15D2464E8&sid=FCB16C6DAE3686F1&eid=423FC0C399AA2C41&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=11