%0 Journal Article
%T A Continuous and Analytical Surface Potential Model for SOI LDMOS<br>一个连续且解析的SOI LDMOS表面势模型
%A Xu Wenjie
%A Sun Lingling
%A Liu Jun
%A Li Wenjun
%A Zhang Haipeng
%A Wu Yanming
%A He Jia
%A <br>徐文杰
%A 孙玲玲
%A 刘军
%A 李文钧
%A 张海鹏
%A 吴颜明
%A 何佳
%J 半导体学报
%D 2007
%I 
%X A continuous and analytical surface potential model for SOI LDMOS,which accounts for automatic transitions between fully and partially-depleted statuses,is presented.The surface potential equation of the SOI device is solved by using the PSP's accurate algorithm of surface potential,and the front and back surface potentials are obtained analytically as a function of gate and drain voltage.The formulations of inversion charge and body charge under the fully-depleted state have been modified.The continuous and analytical DC model for SOI LDMOS is given based on PSP.The comparisons between simulation and measurements indicate that this model can predict the DC characteristics of SOI LDMOS accurately.
%K SOI
%K LDMOS
%K body contact
%K surface potential
%K PSP<br>SOI
%K LDMOS
%K 体接触
%K 表面势
%K PSP
%K SOI
%K LDMOS
%K body
%K contact
%K surface
%K potential
%K PSP
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=5646F94D35B54F6FB397A545071738B5&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=708DD6B15D2464E8&sid=457F754A679A9D25&eid=ADAF655E679AEBA1&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13