%0 Journal Article
%T Negative Persistent Photoconductivity in Unintentionally Doped n-Type GaN<br>非故意掺杂n型GaN的负持续光电导现象
%A Su Zhiguo
%A Xu Jintong
%A Chen Jun
%A Li Xiangyang
%A Liu Ji
%A Zhao Degang
%A <br>苏志国
%A 许金通
%A 陈俊
%A 李向阳
%A 刘骥
%A 赵德刚
%J 半导体学报
%D 2007
%I 
%X The persistent photoconductivity effect in unintentionally doped n-GaN grown by metal organic chemical vapor deposition (MOCVD) is presented.The photoconductivity build-up and its decay behavior with different excitation intensities and different wavelength ranges are observed.The experiment shows persistent photocurrent (PPC),negative photocurrent (NPC),and negative persistent photocurrent (NPPC) trends as the excitation intensity is changed from low to high when the excitation light includes wavelengths larger than the absorption edge of GaN.It is believed that the phenomenon is ruled by competition between capture and release photo-generated electrons and holes by deep electron traps and deep hole traps,respectively.
%K GaN
%K persistent photoconductivity
%K PPC
%K NPPC<br>GaN
%K 持续光电导
%K 负光电导
%K 负持续光电导
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=969F6D32A46F5E21&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=B31275AF3241DB2D&sid=2D207DE75533FA7E&eid=8047434EAE0B2346&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=16