%0 Journal Article
%T Correlation Between Arsenide Precipitation and Dislocations in Undoped LEC GaAs Crystal<br>非掺杂LEC砷化镓晶体中砷沉淀和位错关联性质
%A Zhu Ronghui
%A Zeng Yiping
%A Bu Junpeng
%A Hui Feng
%A Zheng Hongjun
%A Zhao Ji
%A Gao Yongliang
%A <br>朱蓉辉
%A 曾一平
%A 卜俊鹏
%A 惠峰
%A 郑红军
%A 赵冀
%A 高永亮
%J 半导体学报
%D 2008
%I 
%X Using the laser scattering method to measure a polished GaAs wafer,we find that there are four aggregation centers of arsenide precipitation in a GaAs crystal grown in a special thermal field1] and the aggregation centers are at precisely the positions where the dislocation density is at a minimum.In this article,we examine the correlation between the precipitation distribution of arsenide and the dislocations.We also explain what leads to the formation of the four arsenide precipitation aggregation center...
%K gallium arsenide
%K LEC
%K arsenide precipitation
%K micro-defects
%K dislocation distribution<br>砷化镓
%K LEC
%K 砷沉淀
%K 微缺陷
%K 位错分布
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=521D2CA5B094E05907DC43C44E48CC2D&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=9CF7A0430CBB2DFD&sid=1B1F9B96EF7F53E5&eid=FAF71E26421EE61B&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=10