%0 Journal Article
%T Surface Passivation of Variable-Area HgCdTe Photovoltaic Detectors<br>碲镉汞光伏探测器的变面积表面钝化研究
%A Qiao Hui
%A Xu Guoqing
%A Jia Jia
%A Li Xiangyang
%A <br>乔辉
%A 徐国庆
%A 贾嘉
%A 李向阳
%J 半导体学报
%D 2008
%I 
%X Two types of variable-area photovoltaic detectors passivated by single ZnS layer and dual (CdTe/ZnS) layers have been fabricated on the same HgCdTe wafer.Through analyzing the current-voltage curves,the relation between the product of zero-bias resistance and area (R0A),and the ratio of perimeter and area (p/A) of the two types of detectors,it was found that the detectors passivated by ZnS had a significant surface leakage current.Through analyzing the relation of current noise and dark current,it was found the noise of detectors passivated by ZnS was close to shot noise,and the detectors passivated by CdTe/ZnS showed an obvious basic 1/f noise characterization,which caused lower noise than detectors passivated by ZnS.
%K passivation
%K variable-area
%K shot noise
%K 1/f noise
%K photovoltaic detector
%K HgCdTe<br>钝化
%K 变面积
%K 散粒噪声
%K 1/f噪声
%K 光伏探测器
%K 碲镉汞
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=D00DD19E16813709673F3FF3F55B3383&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=DF92D298D3FF1E6E&sid=59754DBA76F6BBAA&eid=2B78D85EBFEED708&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=9