%0 Journal Article
%T Growth and Characterization of HgCdTe Compositional Heterojunctions<br>HgCdTe组分异质结的生长与表征
%A Jiao Cuiling
%A Xu Qingqing
%A Zhao Shouren
%A Sun Shiwen
%A Fang Weizheng
%A Wei Yanfeng
%A <br>焦翠灵
%A 徐庆庆
%A 赵守仁
%A 孙士文
%A 方维政
%A 魏彦锋
%J 半导体学报
%D 2008
%I 
%X The HgCdTe epilayers reported here were double-layers compositional heterojunctions grown by Te-rich liquid phase epitaxy in a horizontal slider system.The substrates adopted were (111) oriented CdZnTe with about 4% Zn.The epilayers were evaluated by the chemical staining method and infrared transmission spectra measurements.A phenomenological model was also established to characterize the profile of the Cd composition along the growth direction in the HgCdTe epilayer.The results of the electrical measurements showed that the carrier mobility of the long-wave layer beneath the double-layer sample was slightly higher than that of the single-layer sample grown with almost the same conditions.The reason for the increase of the mobility can be ascribed to the passive effect of the middle-wave cap layer.
%K HgCdTe
%K liquid phase epitaxy
%K double-layer compositional heterojunction<br>HgCdTe
%K 液相外延
%K 双层组分异质结
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=EB035D7DADF62CEB89C0E1CBF0E317CD&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=DF92D298D3FF1E6E&sid=E3C11E2483CABC48&eid=6733A846E5AFAE2E&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=12