%0 Journal Article
%T Evaluation of planarization capability of copper slurry in the CMP process<br>化学机械抛光制程中铜抛光液平坦化能力的评估
%A Yin Kangd
%A Wang Shengli
%A Liu Yuling
%A Wang Chenwei
%A Li Xiang
%A <br>尹康达
%A 王胜利
%A 刘玉岭
%A 王辰伟
%A 李湘
%J 半导体学报
%D 2013
%I 
%X The evaluation methods of planarization capability of copper slurry are investigated. Planarization capability and material removal rate are the most essential properties of slurry. The goal of chemical mechanical polishing (CMP) is to achieve a flat and smooth surface. Planarization capability is the elimination capability of the step height on the copper pattern wafer surface, and reflects the passivation capability of the slurry to a certain extent. Through analyzing the planarization mechanism of the CMP process and experimental results, the planarization capability of the slurry can be evaluated by the following five aspects: pressure sensitivity, temperature sensitivity, static etch rate, planarization efficiency and saturation properties.
%K planarization capability
%K chemical mechanical polishing
%K pressure sensitivity
%K temperature sensitivity
%K saturation properties<br>平坦化能力
%K 化学机械抛光
%K 压力敏感性
%K 温度敏感性
%K 饱和特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=025C8057C4D37C4BA0041DC7DE7C758F&aid=4D6BB6A422263A45B0203270942C93AD&yid=FF7AA908D58E97FA&vid=339D79302DF62549&iid=38B194292C032A66&sid=83F546FD04A993A9&eid=E158A972A605785F&journal_id=1674-4926&journal_name=半导体学报&referenced_num=0&reference_num=13