%0 Journal Article
%T Tetragonal Distortion of GaN Epilayer with Multiple Buffer Layers on Si (111) Studied by RBS/Channelling and HRXRD<br>Tetragonal Distortion of GaN Epilayer with Multiple Buffer Layers on Si （111） Studied by RBS/Channelling and HRXRD
%A DING Zhi-Bo
%A WANG Kun
%A ZHOU Sheng-Qiang
%A CHEN Tian-Xiang
%A YAO Shu-De
%A <br>丁志博
%A 王坤
%A 周生强
%A 陈田祥
%A 姚淑德
%J 中国物理快报
%D 2007
%I 
%X Rutherford backscattering （RBS）/channelling and high resolution x-ray diffraction （HRXRD） have been used to characterize the tetragonal distortion of a GaN epilayer with four Alx Ga1-xN and single AIN buffer layers grown on a Si （111） substrate by metal-organic vapour phase epitaxy （MOVPE）. The results show that a 1000nm GaN epilayer with a perfect crystal quality （Xmin = 1.54%） can be grown on the Si （111） substrate in virtue of multiple buffer layers. Using the RBS/channelling angular scan around an off-normal （1213） axis in the （1010） plane and the conventional HRXRD θ - 20 scans normal to GaN （0002） and （1122） planes at the 0° and 180° azimuth angles, the tetragonal distortion eT, which is caused by the elastic strain in the epilayer and different buffer layers, can be obtained respectively. The two experiments are testified at one result, the tetragonal distortion of GaN epilayer is nearly to a fully relaxed （eT = 0）.
%K 81
%K 05
%K Ea
%K 82
%K 80
%K Yc
%K 61
%K 10
%K Nz<br>缓冲器
%K 窜槽
%K 畸变光学系统
%K 物理学
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=6E709DC38FA1D09A4B578DD0906875B5B44D4D294832BB8E&cid=47EA7CFDDEBB28E0&jid=E27DA92E19FE279A273627875A70D74D&aid=A6F1F92187EC7BB8A44F31E7F013F4E2&yid=A732AF04DDA03BB3&vid=B91E8C6D6FE990DB&iid=38B194292C032A66&sid=6D80B994DAB4686B&eid=849A5A9D85EBE6D4&journal_id=0256-307X&journal_name=中国物理快报&referenced_num=0&reference_num=0